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Switching losses of high voltage devices such as SiC Power MOSFETs and Si IGBTs are usually characterized using inductive switching tests. However, for SiC Power MOSFETs, the operation at high switching speed arises several issues that compromise the accuracy of the values provided on the Datasheet for the switching losses. In this paper, these issues (load current, freewheeling diode, di/dt and parasitic...
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