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The channel temperature of AlGaN/GaN High-Electron-Mobility Transistor was measured by Infrared Microscopy. The behaviors of the channel temperature distribution, the peak channel temperature and the thermal resistance under DC bias were investigated. IR Microscopy facilitates the study of how the device parameters affect reliability.
The thermal stability and electrical characteristics of GaN high-electron-mobility transistors (HEMTs) were investigated. Storage tests were carried out at 400°C for 48 h to study the ohmic-contact stability by means of the transmission line model. It was found that Ti/Al/Ni/Au ohmic contacts were stable and had superior thermal performance, but the Schottky contact may be more sensitive to the temperature...
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