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This paper reports on the electrical and thermal characterization of a state of the art SiGe ring oscillator (RO) with 2.2 ps gate delay fabricated in a Si/SiGe:C technology featuring fT and fmax of ∼300 GHz and ∼400 GHz, respectively. The transistor model is verified through DC and RF characteristics taken from the same die as the circuit measurements. Excellent agreement between measurements and...
This paper presents a SiGe HBT ring oscillator (RO) achieving a minimum gate delay τgate of 2.7 ps in order to benchmark the applicability of a BiCMOS technology for millimeter wave and sub-millimeter wave applications. State-of-the-art circuit performance is achieved through optimized transistor layout parameters. The transistor model is verified through DC and RF measurements (up to 110GHz). Note...
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