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A systematic study of a capacitorless 1T-DRAM fabricated in 28nm FDSOI technology is presented. The operation mechanism is based on band modulation. The Z2-FET memory cell features a large current sense margin and small OFF-state current at 25°C and 85°C. Moreover, low power consumption during state ‘1’ writing is achieved with ~0.5V programming voltage. These specifications make the Z2-FET an outstanding...
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