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Multichip power modules use parallel connected chips to achieve high current rating. Due to a finite flexibility in a DBC layout, some electrical asymmetries will occur in the module. Parallel connected transistors will exhibit uneven static and dynamic current sharing due to these asymmetries. Especially important are the couplings between gate and power loops of individual transistors. Fast changing...
Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are capable of processing high power at high switching frequencies with less switching losses and conduction losses. As the operating switching frequency increases, the gate driver power requirements of MOSFETs also increase. The power taken from the gate supply is dissipated in the gate resistance. Instead of dissipating...
A current transformer manufactured with silicon steel laminations has been recently introduced and successfully applied to the measurement of current characteristics of fast switching power modules. Its performance competes advantageously with the existing measuring devices due to its high bandwidth, small physical size, simple structure, galvanic isolation for measurement safety, and low cost as...
Auxiliary source bond wires and connections are widely used to in the power module with paralleled MOSFETs or IGBTs. This paper investigates the working mechanism and the effects of the auxiliary source connections in multichip power modules. It reveals that the auxiliary source connections cannot totally decouple the power loop and the gate loop like how the Kelvin source connection does, because...
This paper proposes a novel Direct Bonded Copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic...
The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced...
This paper proposes a novel current measurement method with Silicon Steel Current Transformer (SSCT) for the characterization of fast switching power semiconductors. First, the existing current sensors for characterization of fast switching power semiconductors are experimentally evaluated regarding three essential qualities: high bandwidth, suitable physical size, and galvanic isolation. Then, the...
Body diode of SiC MOSFETs has a relatively high forward voltage drop and still experiences reverse recovery phenomenon. Half bridge with split output aims to decouple both the body diode and junction capacitance of SiC MOSFETs, therefore achieving a reduced switching loss in a bridge configuration. This paper makes the current commutation mechanism and efficiency analysis of half bridge with split...
This paper focuses on circuit mismatch influence on performance of paralleling SiC MOSFETs. Power circuit mismatch and gate driver mismatch influences are analyzed in detail. Simulation and experiment results show the influence of circuit mismatch and verify the analysis. This paper aims to give suggestions on paralleling discrete SiC MOSFETs and designing layout of power modules with paralleled SiC...
This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage and current are presented. Switching losses analysis is made according to the experiment results. The switching...
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