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Silicon carbide (SiC) and gallium nitride metal–oxide–semiconductor field-effect transistors (MOSFETs) are capable of processing high power at high switching frequencies with less switching losses and conduction losses. The gate driver circuit power consumption is directly proportional to the switching frequency. The power taken from the gate supply is dissipated in the gate resistance of the conventional...
Multichip power modules use parallel connected chips to achieve high current rating. Due to a finite flexibility in a DBC layout, some electrical asymmetries will occur in the module. Parallel connected transistors will exhibit uneven static and dynamic current sharing due to these asymmetries. Especially important are the couplings between gate and power loops of individual transistors. Fast changing...
The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced...
This paper focuses on circuit mismatch influence on performance of paralleling SiC MOSFETs. Power circuit mismatch and gate driver mismatch influences are analyzed in detail. Simulation and experiment results show the influence of circuit mismatch and verify the analysis. This paper aims to give suggestions on paralleling discrete SiC MOSFETs and designing layout of power modules with paralleled SiC...
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