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In order to fabricate highly sensitive image sensors, ultra-high energy ion beams, such as 5 MeV of boron, are required. SEN has developed the S-UHE, a single-wafer ultra-high energy ion implanter, to obtain such ultra-high energy beams. The S-UHE has adopted an electrostatic and symmetric, parallelizing lens system, the concept of which is already used in the MC3-II, a medium-current ion implanter,...
In order to fabricate highly sensitive image sensors (IS), ultra-high energetic ion beams such as 5MeV of boron are required. In order to address the requirement as well as more aggressive requirements of leading-edge IS, SEN has developed the S-UHE, an ultra-high energy single-wafer ion implanter. One of the most important features in the S-UHE is a precise beam angle control system to obtain stable...
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