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A novel 2.2-GHz-band ultra-low-voltage Class-C PMOS VCO IC with negative reference and amplitude feedback loop is proposed. The negative reference initially adapts a sufficient bias for the LC-VCO circuit to ensure a robust oscillation start-up. The feedback loop then adaptively controls the bias condition of LC-VCO for Class-C operation in steady-state. The reliability of the feedback loop is enhanced...
A novel 2.4 GHz-band 0.5-V Class-C PMOS VCO IC with an amplitude feedback loop is proposed. The amplitude feedback loop circuit consists of a detector, an invertor and a bias control circuit. The feedback loop automatically changes the bias of LC-VCO and shifts the oscillation mode from initial Class-AB to Class-C in steady-state. The Class-C VCO IC is designed, fabricated and fully evaluated in 180-nm...
In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-µm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control...
This paper presents a fully integrated class-E power amplifier IC with body effect to achieve high efficiency and high gain at low supply voltage for 2.5-GHz band short range wireless communication systems. The class-E amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS. The proposed power amplifier IC exhibits a small-signal gain of 10.8 dB and a saturated output power of 10.8...
A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6...
A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and...
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