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The impact of fin doping (B, P, As) on FinFET device parameters is studied for high-K/midgap metal gate SOI FinFETs. For a fin width of ∼25 nm, >1 V VT modulation is demonstrated from accumulation mode (AM) to inversion mode (IM). IM FinFETs improve short channel FinFET electrostatics, on-off ratio, and VT variability compared to their undoped counterparts. The same parameters degrade in accumulation...
The superior transport properties of III–V materials are promising candidates to achieve improved performance at low power. This paper examines the module challenges of III–V materials in advanced CMOS at or beyond the 10 nm technology node, and reports VLSI compatible epi, junction, contact and gate stack process modules with Xj<10nm, ND=5×1019 cm−3, ρc= 6Ω.µm2 and Dit = 4×1012 eV−1 cm−2...
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