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SiGe channel planar pMOSFETs have been recently shown to offer improved NBTI reliability, owing to reduced hole trapping into pre-existing oxide defects and reduced interface state generation. In this paper we report a broad set of experimental data of SiGe cladding finFETs with varying fin widths, and we show that the intrinsically superior NBTI reliability can be ported to 3D architectures of relevance...
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