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The semiconductor industry has seen a remarkable miniaturization trend, where the size of microelectronic circuit components is expected to reach the scale of atom even subatom. Here, an orbital switch formed at the interface between BaTiO3 (BTO) and La0.5Sr0.5MnO3 (LSMO) is used to manipulate the electric field effect in the LSMO/BTO heterostructure. The orbital switch is based on the connection...
Reversible orbital reconstruction driven by ferroelectric polarization modulates the magnetic performance of model ferroelectric/ferromagnetic heterostructures without onerous limitations. Mn‐ orbital occupancy and related interfacial exotic magnetic states are enhanced and weakened by negative and positive electric fields, respectively, filling the missing member—orbital in the mechanism of...
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