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In this study, high‐performance few‐layered ReS2 field‐effect transistors (FETs), fabricated with hexagonal boron nitride (h‐BN) as top/bottom dual gate dielectrics, are presented. The performance of h‐BN dual gated ReS2 FET having a trade‐off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics...
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