The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
L10 type MnGa alloy is attracting attention as materials to be applied to spintronic devices since they generally show large magnetic anisotropy, small saturation magnetization, and small Gilbert damping constant. It is known that an L10 type MnGa alloy thin film keeps large magnetic anisot-ropy with the increase of the Mn-composition even though saturation magnetization decreases[1]. Thus, it is...
Metal gate/high-k CMOS technology for 28-nm node low power and low standby power application is demonstrated. A gate-first single metal/high-k gate stack has been employed together with leading-edge isolation, ultra-shallow junction, and stress engineering technologies. High density and high performance device is provided with least process cost increase.
Impact of area scaling (especially narrow channel) on Vt lowering by La incorporation in high-k gate NMOSFETs is reported for the first time. It is clarified that Vt becomes higher in narrower channel for La-containing high-k gate. Efforts are made to ascribe the strong dependence of Vt on gate width to less effectiveness of La compared to wider channel. Influence of channel orientation at STI edge...
The effects of the diffusion control technique by inserting physical vapor deposition (PVD)-TiN film between poly-Si and CVD-TiN films on the properties of p-MISFETs using poly-Si/TiN/HfSiON gate stacks have been studied. This insertion was effective in suppressing the diffusion of Si from poly-Si to HfSiON and was able to reduce the Vth value by 0.12 V while keeping the equivalent oxide thickness...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.