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The present work proposes a solution for an isolated gate driver suitable for SiC MOSFETs. The driver is implemented by means of two small magnetic transformers, to provide the turn-on and turn-off gate signals, as well as the power required for an adequate gate control. The operation is based on the modulation of the PWM pulses with a high frequency (HF) square-waveform signal. The resulting modulated...
Performance analysis of three-level active neutral point clamped (ANPC) inverter with 650V SiC MOSFETs by ROHM is presented with a new switching pattern that utilises the active rectification capability of SiC devices. Performance analysis of the converter with 700V DC link and 230Vrms grid voltage are presented for different switching frequency, device case temperature and load conditions. The switching...
A transformerless single-phase PV inverter has been tested with latest generation 650V/ 20A SiC MOSFETs from ROHM. Test results show that the inverter can be operated with high efficiency at high switching frequencies due to high switching and conduction performance of the devices. Results also show that reduction in output filter size, reduced harmonic distortion and increase in power density are...
A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, assembled and tested. The design followed a built-in reliability approach, involving extensive finite-element simulation based analysis of the electro-thermo-mechanical strain and stress affecting the switch during both manufacturing and operation: structural simulations were carried out to identify the...
The objective of this paper is to investigate the output waveform distortion of high switching SiC matrix converter when commutation delay effect is taken into account. During the commutation time in matrix converter, unwanted voltage error occurs which destroys output waveform quality. Influence of commutation delay is more distinct in high switching frequency matrix converter. After presenting the...
With the commercial availability of SiC JFET and MOSFET, their acceptance are expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper presents the possibility of building a matrix converter using Normally-off SiC JFET and SiC MOSFET. Firstly, the paper demonstrates a gate drive circuit for Normally-off...
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