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We present a problem-adapted, physics-based 3D finite element (FE) model of an RF-MEMS switch, which is used for investigating the failure scenario of such devices caused by electrically induced stiction, one of the major reliability concerns, which limits their broad commercial application as, e.g., in mobile phones. In particular, a novel embedded active thermal recovery capability is analyzed by...
The continuous progress in power device and microsystems technology is increasingly supported by problem-specific modeling methodologies and dedicated simulation tools. These do not only enable the visualization of fabrication processes and operational principles, but also the detailed analysis of the device and system operation of competing design variants in a very early stage of the development...
An experimental infrared method for the thermal characterisation of semiconductor devices during fast transient operation, in the range from a few microseconds and up to some milliseconds, is presented. The features which make it suitable and convenient, particularly for use with power electronics applications are pointed out; its time and space resolution are illustrated by means of properly chosen...
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