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The rapid development of gallium nitride (GaN)-based wide bandgap power devices has been stirring power electronics industry for almost a decade. Advanced packaging solutions are eagerly needed to exploit the maximum potential of the high performance GaN semiconductors. Especially for devices in the cascode configuration, the design and fabrication of a suitable package are very challenging for high-frequency,...
The totem-pole bridgeless power factor correction (PFC) rectifier has a simpler topology and higher efficiency than other boost-type bridgeless PFC rectifiers. Its promising performance is enabled by using high-voltage gallium nitride (GaN) high-electron-mobility transistors, which have considerably better figures of merit (e.g., lower reverse recovery charges and less switching losses) than the state-of-the-art...
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