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Field‐Free Switching
In article number 2308219, Hyunsoo Yang, Weisheng Zhao, Shuyuan Shi, and co‐workers address a critical technological challenge within the field of SOT‐MTJ technology by designing SOT layers with compositional gradients to achieve field‐free deterministic perpendicular magnetization switching. Importantly, this technique is readily applicable to high‐density CMOS‐compatible integrated...
The efficient manipulation of magnetization using spin‐orbit torques (SOTs) generated by heavy metals and topological insulators has attracted significant attention. However, the symmetry of these conventional materials makes it challenging to achieve deterministic switching of perpendicular magnetization by currents, which prevents the practical application of SOT‐based spintronic devices such as...