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The on-state resistance Ron of GaN devices can be affected by charge trapping as well as temperature effects. For the reliable application of the devices it is useful to distinguish between these two effects and understand the cause of power losses. In this work, three state-of-the-art GaN power transistors are investigated. An obvious Ron increase by trapping occurs in the GaN normally-off devices,...
In this paper, current collapse phenomena and thermal effects in normally-off and normally-on GaN HEMTs are investigated. The experimental results show that a high-off-state voltage and high-switched drain current at high junction temperature cause an increase of the on-state resistance ${{\rm{R}}_{{\rm{DSON}}}}$. Varying the switching frequency from 50 to 400 kHz, an increase of the on-state resistance...
A 70 mΩ / 600 V normally-off AlGaN/GaN HFET is analyzed and modeled. In particular, static and dynamic characteristics are investigated with the focus on modeling trapping effects and their influence on the on-state resistance and on the switching characteristic. Two methods to measure these trapping effects are compared, a clamped measurement of the on-state resistance and a measurement of a shift...
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