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The impact of asymmetric strain in Ge nano wire (NW) trigate p-MOSFETs with record measured hole mobility [1] is simulated. Contrary to previous studies of uniaxial and biaxial strain, the impact of very large (2.4%), non-uniform asymmetric strain (achieved by patterning-induced lateral relaxation) is studied through NW simulations. Asymmetric strain significantly warps the valence band (VB), reducing...
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