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The effects of X-ray and proton radiation on a LiNbO analog memristor are investigated by I-V hysteresis, Electrochemical Impedance Spectroscopy, low-frequency AC voltage, and X-ray diffraction analysis. Both electrical and structural characterization of an irradiated memristor show that irradiation leads to an increased level of defects in the LiNbO crystalline lattice. These radiation-induced...
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