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In this article, the conduction mechanisms of metal-oxide-semiconductor with vacuum annealed Lanthana (La 2 O 3 ) oxide film are investigated. Lanthana films with thicknesses of 3.5, 4.7, and 11nm were deposited by E-beam evaporation on n-Si (100), and annealed at various temperatures (300–500°C) in ultra-high vacuum (10 −10 –10 −9 Torr) for 90min. From the measurement...
This paper gives an overview of CMOS scaling in the range of sub-0.1 μm. Recent advance in the downsizing of MOSFETs by using various new techniques is described. Possible limitation and of MOSFET downsizing is predicted. A future concept of silicon LSIs in the 2010s is discussed.
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