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This work describes an improved Angelov/Chalmers MESFET model which includes substrate bias effects. The 4-terminal model employs a new and simplified gate current extraction method based on a forward and reverse diode equation which can be independently modified. The improved model is applied to a silicon metal-semiconductor-field-effect-transistor (MESFET) that was fabricated using a 45nm SOI CMOS...
Enhanced voltage silicon metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated on a 45nm SOI CMOS technology with no process changes. MESFETs scaled to Lg = 184nm were fabricated and show a peak fT of 35GHz, current drive of 112mA/mm and breakdown voltages exceeding 4.5V whereas the nominal CMOS voltage was less than 1V on the same process. The devices were characterized from...
Metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated using a 150 nm partially depleted silicon-on-insulator CMOS technology. A peak fT of 40 GHz and peak breakdown voltages of up to 12V were measured. Comparatively, the CMOS transistors on the same process have a maximum steady-state voltage limit of 1.95V. TOM3 model for MESFET developed in ADS. The demonstrated high cut-off...
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