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We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of displacement damage (DD) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors.
Intersil has developed a family of radiation-hardened, high-voltage, high-precision analog parts in a complementary bipolar process on bonded-wafer SOI. Parts in this process, called PR40, include low-noise precision opamps, bandgap voltage references and a temperature sensor.
We report the results of displacement damage testing using 1 MeV equivalent neutron irradiation of a range of Intersil power management and analog parts, including an operational amplifier, voltage reference, linear voltage regulators, comparator, power MOSFET driver, pulse width modulators, analog switches and processor supervisory circuit.
We report the results of low and high dose rate 60Co total dose testing of the Intersil ISL71590SEH integrated temperature sensor together with a brief discussion of the part's electrical specifications and wafer fabrication process. We also report data for the part's performance in the single-event effects (SEE) and displacement damage (DD) environments. The part is shown to offer significantly improved...
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