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Performance of solar cells and modules at operating temperature relative to standard test conditions is primarily determined by the temperature dependence of VOC. Usually this dependence is analyzed by applying a simplistic semi-analytical equation to experimental data without complete understanding of the underlying mechanisms that affect the temperature coefficient dVOC/dT (VOC'). Unanswered questions...
We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO2 and indium tin oxide. High-temperature silicon dioxide is grown on both surfaces on an n-type Si wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high recombination parameter,...
Analyzing regions of dominant recombination in a solar cell is crucial to guide process modifications and device improvements that improve efficiency. Common characterizations such as dark and light current-voltage and quantum efficiency provide only qualitative insights into the distribution of recombination in a solar cell, especially when the cell contains a heterojunction emitter. The open-circuit...
We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material...
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