The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A fixture was designed and built to test power cycling reliability at maximum junction temperatures of 150°C and 175°C. A 1200V, 150A IGBT six pack module was mounted on a single cold plate and three sets of cold plates were connected to DC power supplies controlled by LabView. The IGBTs on each cold plate were cycled to give a junction-to-case temperature rise of 100°C with a maximum junction temperature...
Discontinuous PWM method (DPWM) has been widely used in industrial area to reduce the overall losses; however, it is only effective at higher output frequency condition for an adjustable speed drive (ASD). At low speed condition, the time constant of the IGBT thermal system is much lower than that of the fundamental frequency of the inverter. The harmonics contents as well as the IGBT junction temperature...
Studies show that the power cycling mean time to failure (MTTF) of the insulated-gate bipolar transistor (IGBT) bond wire in an adjustable speed drive may be very short under some very common conditions. This paper proposes a switching frequency reduction method based on the junction temperature variation (ΔTj) of an inverter IGBT. It has the following advantages. First, it reduces the pulsewidth-modulation...
This paper analyzes the power cycling capability of semiconductor under various conditions for adjustable speed drive (ASD). An analysis is made that calculates the mean time to failure (MTTF) of the semiconductor under various conditions, including low speed operation capability, high speed thermal capability and overload capability. After that, the MTTF estimations of the IGBT under different heatsink...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.