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We have investigated the current injected spectrum of flat‐topped LED using self‐assembled Stranski‐Krastanov (S‐K) InAs/InP quantum dots (QDs) grown by selective area low pressure metalorganic vapor phase epitaxy and a double‐capping procedure. Selective area growth using an SiO2 mask with narrow stripes was carried out to tailor a wide emission range for the QDs in sixteen arrayed waveguides. Each...
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