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One of the main expected benefits of AlGaN HEMT technology for microwave applications is related to the higher operating bias voltage achievable with these devices. However, various technological issues, concerning material properties and device technology must be properly tailored to fully exploit the potential of that kind of devices. In this work we report on the realization of HEMT device showing...
High breakdown voltage pHEMTs have been successfully developed by implementing a field-plate (FP) structure. Devices with and without FP have been fabricated on the same wafer in order to compare the improvements induced by adopting the FP. Both kinds of devices showed little or no current dispersion under pulse measurement conditions. Moreover the off-state breakdown voltage improved from 23V, for...
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