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HEMT devices based on AlGaN/GaN heterostructures exhibit constantly improving power performances. Nonlinear characterization is needed at each new device generation, both to assess the maximum power capabilities and to guide the next technological step, by highlighting open problems related to the device layout or material defects. This paper demonstrates the capabilities of the Politecnico di Torino...
An extensive power characterization of devices fabricated on GaN grown on SiC and sapphire substrates has been carried out, including power sweep and load-pull measurements in different bias conditions from class A to class B. An active load-pull bench optimized for high voltage and high power measurements allows to extend the load-pull characterization to the whole Smith chart, and to localize the...
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