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The swirl defect is observed in both n-type Czochralski (Cz) and non-contact crucible (NOC) Si wafers. It is postulated to be the outcome of oxygen precipitation during crystal growth and/or post-growth high temperature processes, specifically processes involving temperatures in the range of 800°C–1000°C. This defect is characterized by low lifetime ring-like regions that decrease the device performance...
By quantifying the role of dopants, impurities and crystal structure, we present guidelines for the fabrication of highly efficient multicrystalline (mc) silicon solar cells. Processed mc n-type wafers feature higher charge carrier diffusion lengths and thus a significantly larger efficiency potential compared with identically produced mc p-type wafers. Still, metal impurities limit the charge carrier...
Simulation of solar cell processing enables inexpensive and rapid process optimization. Over the last twenty years, several models describing the distribution and behavior of iron point defects and iron-silicide precipitates have been developed and incorporated into process simulations. The goal of this work is to elucidate what physics are needed to accurately describe industry-relevant as-grown...
Precipitation of iron in multicrystalline (mc) silicon during typical solar cell processing is investigated with an advanced model that has been previously demonstrated to be able to simulate the iron distribution in two dimensions. The improving detection limits of precipitate measurements with x-ray fluorescence microscopy (μ XRF) allow a first comparison of measured and simulated precipitate densities...
Since 15 years lock-in thermography (LIT) is used to investigate solar cells and modules. While LIT was used at the beginning only for shunt detection, meanwhile special LIT-techniques have been developed to image the minority carrier lifetime, also on wafers, the monochromatic cell efficiency, the local series resistance, the ideality factor, or the physical properties of breakdown sites. A general...
Photoluminescence Imaging has been proven to be very useful for the characterization of silicon material characterization. By detecting emitted photons from the band-to-band recombination with a CCD camera information about the excess carrier density is gained. Besides carrier lifetime spatially resolved concentration measurements of the most prominent metallic impurities, namely interstitial iron...
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