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In this paper, new results obtained with an NMOS magnetic-field sensor made by an industrial 0.8 μm CMOS process are presented. The major disadvantage of MOS magnetic sensors, a larger noise, can be overcome by the submicron CMOS process with 19 nm gate oxide. The device with W/L = 60 μm/50 μm biased at saturation region has a resolution of 150 nT (Hz) - at 1 kHz and 400 nT (Hz) - ...
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