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We present the formation of very thin and uniform Ni silicide contacts on Si and strained SiGe using multi thin Ni/Al layers. Epitaxial Ni(Al1−xSi x)2 layers are achieved on Si with a layer thickness from 14nm to 33nm. The contacts show a lower Schottky barrier than NiSi. The incorporation of a small amount of Al slightly changes the Schottky barrier compared to pure NiSi2. Using Ni/Al multilayers...
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