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Homogeneous nickel germanosilicide layers with low sheet resistance have been achieved on highly strained SiGe layers. The layer homogeneity improves with decreasing Ni thickness. Ultrathin Ni layers of 3nm thermally treated at 400°C yield to homogeneous germanosilicide layers with a preferential {010} growth plane and sharp interfaces to the SiGe layer. This is assumed to be energetically driven...
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