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The performance variation caused by the stress field near a through-silicon via (TSV) is measured using 28-nm node devices across 12-in wafers. The TSV is fabricated by a via-last process. The back-end-of-line dielectrics on TSV cause the asymmetric stress field, i.e., the absolute value of radial stress ($\vert \sigma _{r}\vert )$ does not equal to that of tangential stress ($\vert \sigma _{\theta }\vert )$ ...
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