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The internal defects of CdZnTe crystals grown by the modified vertical Bridgman (MVB) method act as trapping centers or recombination centers in the band gap, which have effects on its resistivity. The relationship between deep-level defects and high resistivity characteristic in Cd0.9Zn0.1Te:In single crystal was studied. The deep-level defects were identified by thermally stimulated current (TSC)...
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