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This paper presents low frequency noise (LFN) measurements of some commonly used microwave transistor technologies, e.g., GaAs-InGaP HBT, GaAs pHEMT, and GaN HEMT. It investigates how the flicker noise scales with current and voltage in the different technologies. The target application is low-phase noise oscillators. From this perspective, low-frequency noise at given frequency normalized to DC power...
This paper presents low frequency noise (LFN) measurements of some commonly used microwave transistor technologies, e.g., GaAs-InGaP HBT, GaAs pHEMT, and GaN HEMT. It investigates how the flicker noise scales with current and voltage in the different technologies. The target application is low-phase noise oscillators. From this perspective, low-frequency noise at given frequency normalized to DC power...
This work studies an important area of oscillator operation — VCO biased at varactor breakdown. In this operation, the oscillator's phase noise is primarily determined by avalanche noise generated in the varactor, i.e., the phase noise can be modulated by the incremental shot noise generated at varactor breakdown. A simple experimental diode model was optimized for modeling varactor-breakdown current...
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