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The dark current in a photodiode limits the use of CMOS image sensor in low noise applications. The dark current is due to the generation-recombination centers present on the surface, space charge region and the bulk. The generation-recombination current depends on the number of active traps present, capture cross-section area of the traps and the operating temperature. In this work we show that the...
The application of shallow trench isolation (STI) as trench capacitor is proposed in CMOS image sensor (CIS) to provide variable conversion gain. This provides higher sensitivity without degrading the dynamic range (DR) of the pixel. The proposed structure uses in-built isolation trenches as capacitors. In case of low light, trench capacitor (TC) is disconnected from the floating diffusion (FD) node...
A super-pixel based on-chip compression is proposed in this paper. The compression is achieved by reading only one sample for each super-pixel. The proposed technique and the corresponding circuit are simulated in MATLAB and UMC 180 nm CMOS technology, respectively. Higher values of PSNR are observed as compared to the state-of-the-art on-chip compression techniques. For the compression factor of...
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