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Because of its simple structure, high density and good scalability, resistive random access memory (RRAM) is expected to be a promising candidate to substitute traditional data storage devices, e.g., hard-disk drive (HDD). In a conventional three-dimensional (3D) bipolar RRAM design, an isolation layer is inserted between two adjacent memory layers. The fabrication of the isolation layer introduces...
Resistive random access memory (ReRAM) has been demonstrated as a promising non-volatile memory technology with features such as high density, low power, good scalability, easy fabrication and compatibility to the existing CMOS technology. The conventional three-dimensional (3D) bipolar ReRAM design usually stacks up multiple memory layers that are separated by isolation layers, e.g. Spin-on-Glass...
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