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A complete solution from parameter extraction to large-signal electrothermal model generation for gallium nitride (GaN) HEMTs is presented in this paper with the consideration of trapping deduced gate and drain lag effects. The extrinsic parasitic parameters are extracted by multibias hot-FET optimization using artificial bee colony algorithm. New terminal charge ($Q_{\mathrm {gs}}$ , $Q_{\mathrm {gd}}$ ...
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