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The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption...
The total-ionizing-dose (TID) radiation tolerance of bandgap references in deep-submicron CMOS technology is generally limited by the radiation introduced leakage current in diodes. An analysis of this phenomenon is given in this paper, and a dynamic base leakage compensation (DBLC) technique is proposed to improve the radiation hardness of a bandgap reference built in a standard 0.13 ...
Recently, high-resolution TDCs have gained more and more popularity due to their increasing implementation in digital PLLs, ADCs, jitter measurement and time-of-flight measurement units. Similar to ADCs, existing architectures of TDCs can be divided into several categories: flash TDCs, pipeline TDCs, and SAR TDCs. The highest achievable time resolution of a TDC is mainly limited by the CMOS gate delay...
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