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Resistive switching memories (RRAMs) are one of the most promising alternatives for nonvolatile storage and nonconventional computing systems. However, their behavior, and therefore their reliability, is limited by technology intrinsic constraints. Standard CMOS reliability analyses do not take into account RRAM-related misbehaviors. Consequently, new and more thorough characterization approaches...
Nowadays the uncertainties produced by the combined effect of PVT Variations together with radiation dramatically compromises electronic systems behavior. Usually, radiation effects are studied from a digital point of view, analyzing upset error ratios and their consequences. In this work we redefine the analysis methodology of combined effects of multiple error sources that may affect analog circuits...
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