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Northrop Grumman space technology (NGST) is developing advanced InP-based HBT microelectronics for next generation high performance aerospace, defense and commercial applications. In this paper we describe these production and advanced technologies including a 0.25 um InP HBT. We present device description, performance, and circuit demonstrations for these technologies.
An ultra-wideband 7-bit 5-Gsps analog-to-digital converter (ADC), fabricated in a 4-level interconnect, 0.8 mum Indium-Phosphide (InP) heterojunction bipolar transistor (HBT) technology, is presented. This monolithic folding/interpolating ADC includes a front-end master-slave sample and hold and a pipeline stage sample and hold. The chip achieves 6 effective number of bits (ENoB) Nyquist performance...
An ultra-wideband 7-bit 5 Gsps analog-to-digital converter (ADC), fabricated in a 4-level interconnect, 0.8 um InP HBT technology, is presented. This monolithic ADC achieves 6 effective number of bits (ENoB) Nyquist performance at a sample rate of 5 Gsps. Furthermore, an ENoB performance of greater than 5.5 is maintained at analog input frequencies up to 7.5 GHz. This effective resolution-bandwidth...
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