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The dependence of the average electron-drift velocity on the electric field strength is measured for a twodimensional electron gas in a quantum well of an AlGaAs/InGaAs heterostructure in the temperature range 200–400 K. It is shown that the saturation velocity varies from 1.55·107 to 1.3·107 cm/s in this temperature range and substantially exceeds the velocity in bulk gallium arsenide.
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