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Modified operating conditions of Gunn diode, SHF value of which on the first harmonic is determined by pumping processes in the charge layer and its diffusion, rather than by domain transit time, excludes frequency dependence of generation on domain transit time. This significantly extends the frequency range of the diode to 30-48 GHz. The reduced impact of a dead zone along with optimization of the...
It has been found that dependence of specific resistance ρ of the active GaAs layer in Schottky-barrier of structures of the field-effect transistor on width d and length l of the inflow-outflow channel in local approximation at d, l<;L is an indicator of its fractal nature. Reduction of d and l at d, l<;L results in significant increase in ρ. It has been shown that the value of local approximation...
It is shown that the specific resistivity of ρ 2D-channel of the drain-dropped HEMT-transistor based on GaN heterostructure in local approximation depends on its linear dimensions l and d and if they are getting smaller it may become even bigger, that specifies the fractal nature of this effect. In course of the experiment there was defined that the limit value of local approximation L=60 um specifies...
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