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It has been found that the screening electric field El located at the periphery of the metal-semiconductor contact with Schottky barrier and penetrating to the contact, depends on contact diameter D and prevents electrons from direct motion, as well as strengthens the electric field of the contact. The impact of El on forward-bias regions of volt-ampere characteristic results in almost total absence...
It is shown that the specific resistivity of ρ 2D-channel of the drain-dropped HEMT-transistor based on GaN heterostructure in local approximation depends on its linear dimensions l and d and if they are getting smaller it may become even bigger, that specifies the fractal nature of this effect. In course of the experiment there was defined that the limit value of local approximation L=60 um specifies...
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