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A 73.9–83.5 GHz synthesizer is implemented in a 130nm SiGe BiCMOS technology. The measured phase noise at 10KHz and 10MHz offset of the 82.4GHz carrier are −88.5dBc/Hz and −111dBc/Hz respectively. Reference spurs are −67 dBc. The synthesizer integrates voltage regulators and power management for SoC applications; it consumes 0.51 W from 1.5 V and 2.7 V supplies, and occupies 0.85 mm × 2.9mm.
This paper examines the effect of the choice of MOS varactor on the performance of a CMOS negative resistance oscillator. The three most common MOS varactor structures (inversion, accumulation, and gated varactor) are combined with a spiral inductor over either deep trench oxide or a polysilicon patterned ground shield, to implement a matrix of six LC VCO's in a 0.24-µm (0.18- µm Leff) SiGe BiCMOS...
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