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A photoemission model of graded band-gap AlGaAs/GaAs wire NEA photocathode is developed based on the numerical solution of coupled Poisson and continuity equations. The emission current density and integral sensitivity of graded band-gap AlGaAs/GaAs wire photocathode as a function of incident light wavelength, Al composition range, and wire length, are simulated according to the model. The simulation...
In order to improve the cathode performance, an exponential-doping structure is applied to the preparation of transmission-mode GaAs photocathodes, in which a forward-directed induced electric field is formed to facilitate photoexcited electrons movement toward surface. To verify the actual effect of the exponential-doping structure, two types of transmission-mode GaAs photocathode samples were grown...
The thickness of emission layer Te has the significant influence on quantum efficiency (QE) of NEA GaN semitransparent UV-photocathode. According to W.E.Spicer's photoemission "3-step model" theory, the whole process is described as photoelectron excitation, transportation from bulk to surface and escape to the vacuum by traversing surface barrier. The first two steps have taken place in...
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