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To research the influencing factors in the optical properties of Ga1-xAlxAs/GaAs photocathode, one uniform-doped sample was prepared with the GaAs thickness of 2.00 μm and the Be-doping concentration of 1×1019 cm-3, and two more exponential-doped samples were 2.00 μm and 1.60 μm in the thickness whose Be-doping concentration quasi-exponentially distributed ranging from 1×1018 cm-3 to 1×1019 cm-3....
In order to improve the cathode performance, an exponential-doping structure is applied to the preparation of transmission-mode GaAs photocathodes, in which a forward-directed induced electric field is formed to facilitate photoexcited electrons movement toward surface. To verify the actual effect of the exponential-doping structure, two types of transmission-mode GaAs photocathode samples were grown...
The thickness of emission layer Te has the significant influence on quantum efficiency (QE) of NEA GaN semitransparent UV-photocathode. According to W.E.Spicer's photoemission "3-step model" theory, the whole process is described as photoelectron excitation, transportation from bulk to surface and escape to the vacuum by traversing surface barrier. The first two steps have taken place in...
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