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A hybrid III-V/SOI directly modulated DFB laser operating at 1.5 μο is fabricated, showing a side mode suppression ratio above 50 dB and a 3-dB bandwidth of 12 GHz. Error-free transmission (BER<10−9) at 10 Gb/s over 66-km SSMF is demonstrated without dispersion compensation and FEC.
We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved output power have been achieved by the DF approach. With the same oxide aperture area, the differential...
We present fabrication of 1.3-µm InAs QD-VCSELs and arrays. The output power of single VCSEL exceeds 1.2 mW. Modulation bandwidth of 2.65 GHz and 2.5 GHz are achieved for single-mode and multi-mode VCSELs. Maximum output power of 28 mW is demonstrated for VCSEL arrays with threshold current of 50 mA.
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