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We have utilized cheaper ambient nitrogen for casting multicrystalline silicon ingots. Ambient nitrogen serves as the N doping source, it causes Si3N4 inclusions and related cracks when the doping amount is too high, while N doping can be effectively controlled by tuning the pressure of ambient nitrogen. The maximum value of the N concentration is measured up to 9.4 × 1015/cm3 by SIMS. The increase...
The determination of boron and phosphorus ionization energies in compensated silicon is very important for assessing the ionization level of dopants and their interaction with each other. In this paper, we achieved the boron and phosphorus ionization energies in compensated silicon by temperature-dependent luminescence for the first time. The results show that the boron and phosphorus ionization energies...
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