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Using a modified, O2-enhanced nonselective wet thermal oxidation process, deep-etched ridge waveguides in AlGaAs heterostructures containing lambda = 808 nm InAlGaAs single quantum well or aluminum-free lambda = 1.3 mum GaAsP/InGaAsN dilute nitride multi-quantum-well active regions have been directly oxidized to effectively provide simultaneous electrical isolation, interface state passivation, and...
A modified wet thermal process is used to oxidize both GaAs waveguide and GaAsP/InGaAsN MQW layers of deeply-etched ridge waveguide lasers, providing up to a 2.3 times threshold reduction and strong index-guiding for kink-free operation
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